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SUM85N03-06P
Vishay Siliconix
N-Channel 30-V (D-S) 175 _ C MOSFET
FEATURES
PRODUCT SUMMARY
V (BR)DSS (V) r DS(on) ( W )
0.006 @ V GS = 10 V
30
0.009 @ V GS = 4.5 V
I D (A)
85
77
D TrenchFET r Power MOSFET
D 175 _ C Junction Temperature
D PWM Optimized for High Efficiency
D New Package with Low Thermal Resistance
D 100% R g Tested
APPLICATIONS
TO-263
G
D
D Buck Converter
? High Side
? Low Side
D Synchronous Rectifier
? Secondary Rectifier
G
D S
Top View
S
Ordering Information: SUM85N03-06P
SUM85N03-06P-E3 (Lead Free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T A = 25 _ C UNLESS OTHERWISE NOTED)
Drain-Source Voltage
Gate-Source Voltage
Parameter
Symbol
V DS
V GS
Limit
30
" 20
Unit
V
Continuous Drain Current (T J = 175 _ C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy a
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
T C = 25 _ C
T C = 100 _ C
L = 0.1 mH
T C = 25 _ C
T A = 25 _ C c
I D
I DM
I AR
E AR
P D
T J , T stg
85
67
200
45
101
100 b
3.75
? 55 to 175
A
mJ
W
_ C
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount c
Symbol
Limit
40
Unit
Junction-to-Ambient
Junction-to-Case
Free Air
R thJA
R thJC
62.5
1.5
_ C/W
Notes
a. Duty cycle v 1%.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).
Document Number: 71903
S-32523—Rev. B, 08-Dec-03
www.vishay.com
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